RN2107,LF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
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Technische Details RN2107,LF(CT Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA.
Weitere Produktangebote RN2107,LF(CT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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RN2107,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
RN2107,LF(CT | Toshiba |
Digital Transistors Bias Resistor Built-in transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RN2107,LF(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2107,LF(CT |
|
Hersteller: Toshiba
Digital Transistors Bias Resistor Built-in transistor
Digital Transistors Bias Resistor Built-in transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen
Stück im Wert von UAH