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RN2111MFV,L3F

RN2111MFV,L3F Toshiba Semiconductor and Storage

RN2111MFV_datasheet_en_20190107.pdf?did=5885&prodName=RN2111MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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Anzahl Preis
59+0.30 EUR
97+0.18 EUR
155+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.06 EUR
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Technische Details RN2111MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 10 kOhms, Resistors Included: R1 Only.

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RN2111MFV,L3F RN2111MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN2111MFV_datasheet_en_20190107.pdf?did=5885&prodName=RN2111MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2111MFV,L3F RN2111MFV,L3F Hersteller : Toshiba RN2111MFV_datasheet_en_20190107-1760686.pdf Digital Transistors Bias Resistor Built-in Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH