RN2131MFV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 113+ | 0.19 EUR |
| 182+ | 0.12 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.074 EUR |
| 2000+ | 0.064 EUR |
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Technische Details RN2131MFV,L3F Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 100 kOhms, Resistors Included: R1 Only.
Weitere Produktangebote RN2131MFV,L3F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
RN2131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms Resistors Included: R1 Only |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
RN2131MFV,L3F | Toshiba |
Digital Transistors 100kohm 50V 0.1A SOT-723 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RN2131MFV,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RN2131MFV,L3F |
![]() |
Hersteller: Toshiba
Digital Transistors 100kohm 50V 0.1A SOT-723
Digital Transistors 100kohm 50V 0.1A SOT-723
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen
Stück im Wert von UAH


