| Anzahl | Preis |
|---|---|
| 11+ | 0.26 EUR |
| 16+ | 0.18 EUR |
| 100+ | 0.12 EUR |
| 3000+ | 0.081 EUR |
| 9000+ | 0.06 EUR |
| 24000+ | 0.058 EUR |
| 45000+ | 0.053 EUR |
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Technische Details RN2303(TE85L,F) Toshiba
Description: TRANS PREBIAS PNP 50V 0.1A USM, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 200 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Cut Tape (CT).
Weitere Produktangebote RN2303(TE85L,F) nach Preis ab 0.12 EUR bis 0.26 EUR
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RN2303(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS PNP 50V 0.1A USMResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 367 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2303(TE85L,F) | Hersteller : TOSHIBA |
SOT23/SOT323 |
auf Bestellung 2394 Stücke: Lieferzeit 21-28 Tag (e) |