RN2305(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS PREBIAS PNP 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 103+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN2305(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM, Packaging: Cut Tape (CT), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SC-70, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote RN2305(TE85L,F) nach Preis ab 0.05 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN2305(TE85L,F) | Hersteller : Toshiba |
Digital Transistors 100mA -50volts 3Pin 2.2K x 47Kohms |
auf Bestellung 3781 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| RN2305(TE85L,F) | Hersteller : TOSHIBA |
SOT23/SOT323 |
auf Bestellung 2833 Stücke: Lieferzeit 21-28 Tag (e) |