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RN2305,LXHF

RN2305,LXHF Toshiba Semiconductor and Storage

RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.099 EUR
6000+0.09 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2305,LXHF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SC-70, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN2305,LXHF nach Preis ab 0.097 EUR bis 0.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RN2305,LXHF RN2305,LXHF Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2305,LXHF RN2305,LXHF Toshiba BDC7D5C158FE31FEB04853CD7BAD80A341AE4C40DDAB8DF8DF0A2F038C20A4D6.pdf Digital Transistors AUTO AEC-Q TR PNP BRT, 2.2kO, 47kO, -50V, -0.1A (SOT-323)
auf Bestellung 8980 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.51 EUR
10+0.5 EUR
100+0.35 EUR
500+0.22 EUR
1000+0.19 EUR
3000+0.11 EUR
6000+0.097 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2305,LXHF RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2305,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2305,LXHF BDC7D5C158FE31FEB04853CD7BAD80A341AE4C40DDAB8DF8DF0A2F038C20A4D6.pdf
RN2305,LXHF
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q TR PNP BRT, 2.2kO, 47kO, -50V, -0.1A (SOT-323)
auf Bestellung 8980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.51 EUR
10+0.5 EUR
100+0.35 EUR
500+0.22 EUR
1000+0.19 EUR
3000+0.11 EUR
6000+0.097 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH