RN2309,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Technische Details RN2309,LF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 200 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN2309,LF nach Preis ab 0.05 EUR bis 0.16 EUR
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RN2309,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2309,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 159+ | 0.11 EUR |
| 238+ | 0.074 EUR |
| 500+ | 0.056 EUR |
| 1000+ | 0.05 EUR |