RN2402,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2756 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 0.49 EUR |
| 76+ | 0.35 EUR |
| 155+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.098 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN2402,LF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote RN2402,LF nach Preis ab 0.065 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN2402,LF | Hersteller : Toshiba |
Digital Transistors Bias Resistor PNP 10kohm -100mA -50V |
auf Bestellung 3032 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
RN2402,LF | Hersteller : Toshiba |
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin S-Mini T/R |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
RN2402,LF | Hersteller : Toshiba |
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
RN2402,LF | Hersteller : Toshiba |
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
RN2402,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |