RN2418,LXHF Toshiba Semiconductor and Storage


docget.jsp?did=18883&prodName=RN2418
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.093 EUR
6000+0.084 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2418,LXHF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V SMINI, Qualification: AEC-Q101, Grade: Automotive, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: S-Mini, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount.

Weitere Produktangebote RN2418,LXHF nach Preis ab 0.084 EUR bis 0.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN2418,LXHF RN2418,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2418,LXHF RN2418,LXHF Toshiba 81FF91ECFFB0F9FBA339681950A987DA990F330959DF56823D4B6A22BB6B266E.pdf Digital Transistors AUTO AEC-Q TR PNP Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.47 EUR
10+0.42 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
3000+0.093 EUR
6000+0.084 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2418,LXHF docget.jsp?did=18883&prodName=RN2418
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2418,LXHF 81FF91ECFFB0F9FBA339681950A987DA990F330959DF56823D4B6A22BB6B266E.pdf
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q TR PNP Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.47 EUR
10+0.42 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
3000+0.093 EUR
6000+0.084 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH