RN2502(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
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Technische Details RN2502(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SMV, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO).
Weitere Produktangebote RN2502(TE85L,F)
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RN2502(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SMV Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
Produkt ist nicht verfügbar |
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RN2502(TE85L,F) | Hersteller : Toshiba |
Digital Transistors Gen Trans PNP x 2 SMV, -50V, -100A |
Produkt ist nicht verfügbar |