RN2605(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Technische Details RN2605(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6, Part Status: Active, Supplier Device Package: SM6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN2605(TE85L,F) nach Preis ab 0.092 EUR bis 0.71 EUR
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RN2605(TE85L,F) | Toshiba |
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz |
auf Bestellung 12499 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2605(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SM6 Part Status: Active Supplier Device Package: SM6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
auf Bestellung 3012 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN2605(TE85L,F) |
|
Hersteller: Toshiba
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
auf Bestellung 12499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.52 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.12 EUR |
| 24000+ | 0.1 EUR |
| 45000+ | 0.092 EUR |
| RN2605(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 3012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 47+ | 0.44 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |