Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2605(TE85L,F)
RN2605(TE85L,F)

RN2605(TE85L,F) Toshiba Semiconductor and Storage

RN2601-06.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2605(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.3W SM6, Part Status: Active, Supplier Device Package: SM6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN2605(TE85L,F) nach Preis ab 0.077 EUR bis 0.6 EUR

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RN2605(TE85L,F) RN2605(TE85L,F) Hersteller : Toshiba RN2601-06.pdf Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
auf Bestellung 12499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.44 EUR
10+0.29 EUR
100+0.15 EUR
1000+0.14 EUR
3000+0.099 EUR
24000+0.084 EUR
45000+0.077 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RN2605(TE85L,F) RN2605(TE85L,F) Hersteller : Toshiba Semiconductor and Storage RN2601-06.pdf Description: TRANS 2PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 3012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
47+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH