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RN2608(TE85L,F) Toshiba

Name: RN2608(TE85L,F)
Brand: Toshiba
SKU: 7151024-4
Price: 0.15 EUR
Availability: InStock

RN2608_datasheet_en_20191111-1609016.pdf

Hersteller: Toshiba
Bipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz

auf Bestellung 3000 Stücke:

Lieferzeit 327-341 Tag (e)

Anzahl	Preis ohne MwSt
60+	0.88 EUR
80+	0.66 EUR
139+	0.37 EUR
500+	0.25 EUR
1000+	0.19 EUR
3000+	0.15 EUR

Mindestbestellmenge: 60

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Technische Details RN2608(TE85L,F) Toshiba

Description: TRANS 2PNP PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SM6, Part Status: Active.

Weitere Produktangebote RN2608(TE85L,F)

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	RN2608(TE85L,F)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS 2PNP PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SM6 Part Status: Active	Produkt ist nicht verfügbar
	RN2608(TE85L,F)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS 2PNP PREBIAS 0.3W SM6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SM6 Part Status: Active	Produkt ist nicht verfügbar