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RN2701JE(TE85L,F)

RN2701JE(TE85L,F) Toshiba Semiconductor and Storage

docget.jsp?did=19089&prodName=RN2705JE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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Technische Details RN2701JE(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.1W ESV, Part Status: Active, Supplier Device Package: ESV, Resistor - Emitter Base (R2): 4.7kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN2701JE(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN2701JE(TE85L,F) RN2701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2701JE(TE85L,F) RN2701JE(TE85L,F) Toshiba 01764351CC354D84DF91B1D1B510F556FA02AED603B83669A11DCB6C4894914B.pdf Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2701JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2701JE(TE85L,F) 01764351CC354D84DF91B1D1B510F556FA02AED603B83669A11DCB6C4894914B.pdf
RN2701JE(TE85L,F)
Hersteller: Toshiba
Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH