RN2704,LF

RN2704,LF Toshiba Semiconductor and Storage


RN2704_datasheet_en_20191024.pdf?did=18900&prodName=RN2704 Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2704,LF Toshiba Semiconductor and Storage

Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: USV.

Weitere Produktangebote RN2704,LF nach Preis ab 0.086 EUR bis 0.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN2704,LF RN2704,LF Hersteller : Toshiba Semiconductor and Storage RN2704_datasheet_en_20191024.pdf?did=18900&prodName=RN2704 Description: PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
38+0.7 EUR
55+ 0.48 EUR
112+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 38
RN2704,LF RN2704,LF Hersteller : Toshiba RN2704_datasheet_en_20191024-1627321.pdf Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 8799 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
108+ 0.48 EUR
264+ 0.2 EUR
1000+ 0.14 EUR
3000+ 0.11 EUR
9000+ 0.088 EUR
24000+ 0.086 EUR
Mindestbestellmenge: 75