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RN2903FE,LXHF(CT

RN2903FE,LXHF(CT Toshiba Semiconductor and Storage

RN2903FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2903FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
8000+0.13 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2903FE,LXHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS 2PNP 50V 100MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ES6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote RN2903FE,LXHF(CT nach Preis ab 0.13 EUR bis 0.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN2903FE,LXHF(CT RN2903FE,LXHF(CT Toshiba AD5A1B25CD3A6DAF48D4465ED74AA5E15048DA061AF7634D874E3A77D7A47402.pdf Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-563)
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.73 EUR
10+0.57 EUR
100+0.36 EUR
500+0.25 EUR
1000+0.21 EUR
2000+0.19 EUR
4000+0.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903FE,LXHF(CT RN2903FE,LXHF(CT Toshiba Semiconductor and Storage RN2903FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2903FE Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903FE,LXHF(CT AD5A1B25CD3A6DAF48D4465ED74AA5E15048DA061AF7634D874E3A77D7A47402.pdf
RN2903FE,LXHF(CT
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-563)
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.73 EUR
10+0.57 EUR
100+0.36 EUR
500+0.25 EUR
1000+0.21 EUR
2000+0.19 EUR
4000+0.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2903FE,LXHF(CT RN2903FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2903FE
RN2903FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH