RN2904FE,LF

RN2904FE,LF Toshiba Semiconductor and Storage


RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.071 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
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Technische Details RN2904FE,LF Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Supplier Device Package: ES6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V.

Weitere Produktangebote RN2904FE,LF nach Preis ab 0.071 EUR bis 0.42 EUR

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RN2904FE,LF RN2904FE,LF Hersteller : Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
125+0.14 EUR
500+0.12 EUR
1000+0.082 EUR
2000+0.071 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LF RN2904FE,LF Hersteller : Toshiba RN2904FE_datasheet_en_20211223-1147042.pdf Digital Transistors ES6 PLN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH