Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2905FE,LXHF(CT
RN2905FE,LXHF(CT

RN2905FE,LXHF(CT Toshiba Semiconductor and Storage

RN2905FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2905FE
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.14 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2905FE,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: ES6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount.

Weitere Produktangebote RN2905FE,LXHF(CT nach Preis ab 0.1 EUR bis 0.65 EUR

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RN2905FE,LXHF(CT RN2905FE,LXHF(CT Toshiba 16357612FFCD3E1F05BA983106045C34C611694F3161903770EB994D5715492B.pdf Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563)
auf Bestellung 7720 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.65 EUR
10+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
4000+0.11 EUR
8000+0.1 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT RN2905FE,LXHF(CT Toshiba Semiconductor and Storage RN2905FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2905FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
44+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT 16357612FFCD3E1F05BA983106045C34C611694F3161903770EB994D5715492B.pdf
RN2905FE,LXHF(CT
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563)
auf Bestellung 7720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.65 EUR
10+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
4000+0.11 EUR
8000+0.1 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2905FE,LXHF(CT RN2905FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2905FE
RN2905FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.65 EUR
44+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH