Produkte > TOSHIBA > RN2910,LF(CT
RN2910,LF(CT

RN2910,LF(CT Toshiba

RN2910_datasheet_en_20210824-1627215.pdf
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 8549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.49 EUR
10+0.4 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.096 EUR
3000+0.073 EUR
9000+0.063 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit: 10-14 Tag (e)
Mindestmenge: 7 Stücke
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2910,LF(CT Toshiba

Description: TRANS PREBIAS 2PNP 50V 100MA SMQ, Packaging: Tape & Reel (TR), Package / Case: SC-61AA, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SMQ, Part Status: Active.

Weitere Produktangebote RN2910,LF(CT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN2910,LF(CT RN2910,LF(CT Toshiba Semiconductor and Storage RN2910_datasheet_en_20260224.pdf?did=18911&prodName=RN2910 Description: TRANS PREBIAS 2PNP 50V 100MA SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2910,LF(CT RN2910,LF(CT Toshiba Semiconductor and Storage RN2910_datasheet_en_20260224.pdf?did=18911&prodName=RN2910 Description: TRANS PREBIAS 2PNP 50V 100MA SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2910,LF(CT RN2910_datasheet_en_20260224.pdf?did=18911&prodName=RN2910
RN2910,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2910,LF(CT RN2910_datasheet_en_20260224.pdf?did=18911&prodName=RN2910
RN2910,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH