RN2911FE,LXHF(CT

RN2911FE,LXHF(CT Toshiba Semiconductor and Storage


RN2911FE_datasheet_en_20211223.pdf?did=19096&prodName=RN2911FE Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.19 EUR
Mindestbestellmenge: 4000
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Produktbewertung abgeben

Technische Details RN2911FE,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RN2911FE,LXHF(CT nach Preis ab 0.16 EUR bis 0.92 EUR

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RN2911FE,LXHF(CT RN2911FE,LXHF(CT Hersteller : Toshiba Semiconductor and Storage RN2911FE_datasheet_en_20211223.pdf?did=19096&prodName=RN2911FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
43+ 0.62 EUR
100+ 0.31 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
2000+ 0.19 EUR
Mindestbestellmenge: 30
RN2911FE,LXHF(CT RN2911FE,LXHF(CT Hersteller : Toshiba RN2911FE_datasheet_en_20211223-1609102.pdf Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=10kO, VCEO=-50V, IC=-0.1A (SOT-563)
auf Bestellung 7900 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
77+ 0.68 EUR
177+ 0.29 EUR
1000+ 0.21 EUR
4000+ 0.2 EUR
8000+ 0.17 EUR
24000+ 0.16 EUR
Mindestbestellmenge: 57