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RN2971(TE85L,F)

RN2971(TE85L,F) Toshiba Semiconductor and Storage

RN2970%2C71.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
60+0.3 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.14 EUR
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Technische Details RN2971(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.2W US6, Supplier Device Package: US6, Resistor - Base (R1): 10kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active.

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RN2971(TE85L,F) RN2971(TE85L,F) Toshiba Semiconductor and Storage RN2970%2C71.pdf Description: TRANS 2PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2971(TE85L,F) RN2971(TE85L,F) Toshiba RN2971_datasheet_en_20191118-1608984.pdf Digital Transistors US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2971(TE85L,F) RN2970%2C71.pdf
RN2971(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2971(TE85L,F) RN2971_datasheet_en_20191118-1608984.pdf
RN2971(TE85L,F)
Hersteller: Toshiba
Digital Transistors US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH