Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2971(TE85L,F)

RN2971(TE85L,F) Toshiba Semiconductor and Storage

Name: RN2971(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 4516509-3
Price: 0.23 EUR
Availability: InStock

Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Part Status: Active

auf Bestellung 2960 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
24+	1.09 EUR
35+	0.76 EUR
100+	0.38 EUR
500+	0.31 EUR
1000+	0.23 EUR

Mindestbestellmenge: 24

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Technische Details RN2971(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote RN2971(TE85L,F)

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	RN2971(TE85L,F)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS 2PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: US6 Part Status: Active	Produkt ist nicht verfügbar
	RN2971(TE85L,F)	Hersteller : Toshiba	Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz	Produkt ist nicht verfügbar