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RN4907,LF

RN4907,LF Toshiba Semiconductor and Storage

RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.074 EUR
6000+0.069 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN4907,LF Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP PREBIAS 0.2W US6, Supplier Device Package: US6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN4907,LF nach Preis ab 0.067 EUR bis 0.44 EUR

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RN4907,LF RN4907,LF Toshiba RN4907_datasheet_en_20210824-1150760.pdf Digital Transistors US6-PLN
auf Bestellung 7133 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.092 EUR
3000+0.077 EUR
6000+0.067 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4907,LF RN4907,LF Toshiba Semiconductor and Storage RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
59+0.3 EUR
120+0.15 EUR
500+0.12 EUR
1000+0.085 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4907,LF RN4907_datasheet_en_20210824-1150760.pdf
RN4907,LF
Hersteller: Toshiba
Digital Transistors US6-PLN
auf Bestellung 7133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.092 EUR
3000+0.077 EUR
6000+0.067 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4907,LF RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907
RN4907,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
59+0.3 EUR
120+0.15 EUR
500+0.12 EUR
1000+0.085 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH