| Anzahl | Preis |
|---|---|
| 6+ | 0.52 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.09 EUR |
| 9000+ | 0.076 EUR |
| 24000+ | 0.07 EUR |
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Technische Details RN4982,LF(CT Toshiba
Description: TRANS NPN/PNP PREBIAS 0.2W US6, Supplier Device Package: US6, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN4982,LF(CT nach Preis ab 0.11 EUR bis 0.58 EUR
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RN4982,LF(CT | Toshiba Semiconductor and Storage |
 Description: TRANS NPN/PNP PREBIAS 0.2W US6Supplier Device Package: US6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz, 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 3847 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN4982,LF(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.11 EUR |