RN4988,LXHF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: AUTO AEC-Q TR NPN + PNP BRT, Q1B
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
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Technische Details RN4988,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPN + PNP BRT, Q1B, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.
Weitere Produktangebote RN4988,LXHF(CT nach Preis ab 0.099 EUR bis 0.7 EUR
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RN4988,LXHF(CT | Hersteller : Toshiba |
Digital Transistors AUTO AEC-Q TR NPN + PNP BRT, 22kO, 47kO, 22kO, 47kO, 50V (SOT-363) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4988,LXHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR NPN + PNP BRT, Q1B Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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