RND030N20TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 3A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 5.2V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details RND030N20TL Rohm Semiconductor
Description: MOSFET N-CH 200V 3A CPT3, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 5.2V @ 1mA, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RND030N20TL nach Preis ab 0.67 EUR bis 1.8 EUR
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RND030N20TL | ROHM Semiconductor |
MOSFETs 10V Drive Nch Power MOSFET |
auf Bestellung 1270 Stücke: Lieferzeit 10-14 Tag (e) |
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RND030N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 3A CPT3 Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: CPT3 Vgs(th) (Max) @ Id: 5.2V @ 1mA Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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| RND030N20TL |
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Hersteller: ROHM Semiconductor
MOSFETs 10V Drive Nch Power MOSFET
MOSFETs 10V Drive Nch Power MOSFET
auf Bestellung 1270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.58 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.8 EUR |
| 2500+ | 0.67 EUR |
| RND030N20TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 3A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 5.2V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 3A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 5.2V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 18+ | 1.21 EUR |
| 100+ | 0.83 EUR |