RQ1A070APTR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 7A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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Technische Details RQ1A070APTR Rohm Semiconductor
Description: MOSFET P-CH 12V 7A TSMT8, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 550mW (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote RQ1A070APTR nach Preis ab 0.54 EUR bis 1.64 EUR
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RQ1A070APTR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 7A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V |
auf Bestellung 3473 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ1A070APTR | ROHM Semiconductor |
MOSFETs Trans MOSFET P-CH 12V 7A |
auf Bestellung 3107 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RQ1A070APTR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
Description: MOSFET P-CH 12V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
auf Bestellung 3473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.69 EUR |
| RQ1A070APTR |
|
Hersteller: ROHM Semiconductor
MOSFETs Trans MOSFET P-CH 12V 7A
MOSFETs Trans MOSFET P-CH 12V 7A
auf Bestellung 3107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.64 EUR |
| 10+ | 1.31 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |