Produkte > ROHM SEMICONDUCTOR > RQ1E070RPHZGTR
RQ1E070RPHZGTR

RQ1E070RPHZGTR ROHM Semiconductor

Hersteller: ROHM Semiconductor
MOSFETs TSMT8 P CHAN 30V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.54 EUR
100+1.09 EUR
500+0.87 EUR
1000+0.77 EUR
3000+0.71 EUR
6000+0.65 EUR
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Technische Details RQ1E070RPHZGTR ROHM Semiconductor

Description: PCH -30V -7A SMALL SIGNAL MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V.

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RQ1E070RPHZGTR RQ1E070RPHZGTR Hersteller : Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RQ1E070RPHZGTR RQ1E070RPHZGTR Hersteller : Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH