RQ3E180AJTB1 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 241+ | 0.73 EUR |
| 251+ | 0.69 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.58 EUR |
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Technische Details RQ3E180AJTB1 Rohm Semiconductor
Description: NCH 30V 18A MIDDLE POWER MOSFET:, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 11mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V.
Weitere Produktangebote RQ3E180AJTB1 nach Preis ab 1.15 EUR bis 3.19 EUR
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RQ3E180AJTB1 | Rohm Semiconductor |
 Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
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RQ3E180AJTB1 | ROHM Semiconductor |
MOSFETs HSMT8 N-CH 30V 18A |
auf Bestellung 2352 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180AJTB1 | Rohm Semiconductor |
Description: NCH 30V 18A MIDDLE POWER MOSFET: Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
auf Bestellung 815 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180AJTB1 | Rohm Semiconductor |
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 27 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RQ3E180AJTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 80+ | 2.78 EUR |
| 100+ | 1.92 EUR |
| 200+ | 1.59 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.21 EUR |
| RQ3E180AJTB1 |
|
Hersteller: ROHM Semiconductor
MOSFETs HSMT8 N-CH 30V 18A
MOSFETs HSMT8 N-CH 30V 18A
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.12 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.29 EUR |
| 3000+ | 1.2 EUR |
| 6000+ | 1.15 EUR |
| RQ3E180AJTB1 |
|
Hersteller: Rohm Semiconductor
Description: NCH 30V 18A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: NCH 30V 18A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
auf Bestellung 815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.46 EUR |
| RQ3E180AJTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)