RQ5E040RPTL ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET RQ5E040RP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for DC/DC converters.
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.5 EUR |
| 9000+ | 0.49 EUR |
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Technische Details RQ5E040RPTL ROHM Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ5E040RPTL nach Preis ab 0.52 EUR bis 1.84 EUR
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RQ5E040RPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ5E040RPTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
auf Bestellung 1370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.15 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |