RQ5E040RPTL ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET RQ5E040RP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for DC/DC converters.
auf Bestellung 13686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.42 EUR |
| 9000+ | 0.41 EUR |
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Technische Details RQ5E040RPTL ROHM Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Weitere Produktangebote RQ5E040RPTL nach Preis ab 0.44 EUR bis 1.55 EUR
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RQ5E040RPTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5E040RPTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
Produkt ist nicht verfügbar |