| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.43 EUR |
| 9000+ | 0.38 EUR |
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Technische Details RQ5G060BGTCL ROHM Semiconductor
Description: NCH 40V 6A SOT-346T, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V.
Weitere Produktangebote RQ5G060BGTCL nach Preis ab 0.48 EUR bis 1.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RQ5G060BGTCL | Rohm Semiconductor |
 Description: NCH 40V 6A SOT-346T, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V |
auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ5G060BGTCL |
|
Hersteller: Rohm Semiconductor
Description: NCH 40V 6A SOT-346T, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Description: NCH 40V 6A SOT-346T, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20.6mOhm @ 6A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
auf Bestellung 2763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 21+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |