RQ5H020SPTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.31 EUR |
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Technische Details RQ5H020SPTL Rohm Semiconductor
Description: MOSFET P-CH 45V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V, Power Dissipation (Max): 540mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V.
Weitere Produktangebote RQ5H020SPTL nach Preis ab 0.19 EUR bis 1.33 EUR
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RQ5H020SPTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3 Kind of package: reel; tape Drain-source voltage: -45V Drain current: -2A On-state resistance: 0.28Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 4.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Mounting: SMD Case: TSMT3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2842 Stücke: Lieferzeit 7-14 Tag (e) |
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RQ5H020SPTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3 Kind of package: reel; tape Drain-source voltage: -45V Drain current: -2A On-state resistance: 0.28Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 4.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Mounting: SMD Case: TSMT3 |
auf Bestellung 2842 Stücke: Lieferzeit 14-21 Tag (e) |
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RQ5H020SPTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 45V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
auf Bestellung 5493 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5H020SPTL | Hersteller : ROHM Semiconductor |
MOSFET Pch -45V -2.0A Power MOSFET |
auf Bestellung 10980 Stücke: Lieferzeit 14-28 Tag (e) |
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