RQ5H030TNTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
| 9000+ | 0.35 EUR |
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Technische Details RQ5H030TNTL Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V.
Weitere Produktangebote RQ5H030TNTL nach Preis ab 0.38 EUR bis 1.05 EUR
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RQ5H030TNTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
auf Bestellung 13180 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5H030TNTL | Hersteller : ROHM Semiconductor |
MOSFET MOSFET WITH G-S PROTECTION DIO |
auf Bestellung 67597 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ5H030TNTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Mounting: SMD Gate charge: 6.2nC Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 1W Pulsed drain current: 12A Type of transistor: N-MOSFET Gate-source voltage: ±12V Drain-source voltage: 45V Drain current: 3A On-state resistance: 95mΩ |
Produkt ist nicht verfügbar |
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| RQ5H030TNTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Mounting: SMD Gate charge: 6.2nC Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 1W Pulsed drain current: 12A Type of transistor: N-MOSFET Gate-source voltage: ±12V Drain-source voltage: 45V Drain current: 3A On-state resistance: 95mΩ |
Produkt ist nicht verfügbar |