RQ5L035GNTCL ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET RQ5L035GN is the high reliability transistor, suitable for switching applications.
auf Bestellung 3260 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 1.81 EUR |
| 34+ | 1.57 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.77 EUR |
| 3000+ | 0.68 EUR |
| 6000+ | 0.65 EUR |
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Technische Details RQ5L035GNTCL ROHM Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.7V @ 50µA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V.
Weitere Produktangebote RQ5L035GNTCL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RQ5L035GNTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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RQ5L035GNTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V |
Produkt ist nicht verfügbar |
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RQ5L035GNTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V |
Produkt ist nicht verfügbar |
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| RQ5L035GNTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |