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RQ5L045BGTCL

RQ5L045BGTCL ROHM Semiconductor

rq5l045bgtcl-e.pdf Hersteller: ROHM Semiconductor
MOSFETs Nch 60V 4.5A, TSMT3, Power MOSFET
auf Bestellung 2953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.05 EUR
10+0.92 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.42 EUR
3000+0.38 EUR
9000+0.33 EUR
Mindestbestellmenge: 3
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Technische Details RQ5L045BGTCL ROHM Semiconductor

Description: NCH 60V 4.5A, TSMT3, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 4.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V.

Weitere Produktangebote RQ5L045BGTCL nach Preis ab 0.4 EUR bis 1.41 EUR

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RQ5L045BGTCL RQ5L045BGTCL Hersteller : Rohm Semiconductor rq5l045bgtcl-e.pdf Description: NCH 60V 4.5A, TSMT3, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
auf Bestellung 2779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
21+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
RQ5L045BGTCL RQ5L045BGTCL Hersteller : Rohm Semiconductor rq5l045bgtcl-e.pdf Description: NCH 60V 4.5A, TSMT3, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
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Im Einkaufswagen  Stück im Wert von  UAH