| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.49 EUR |
| 6000+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RQ6C065BCTCR ROHM Semiconductor
Description: MOSFET P-CH 20V 6.5A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1.25W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 6.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ6C065BCTCR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
RQ6C065BCTCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET P-CH 20V 6.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1.25W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|
|
|
RQ6C065BCTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 6.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 10 V |
Produkt ist nicht verfügbar |