RQ6E035TNTR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.34 EUR |
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Technische Details RQ6E035TNTR Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ6E035TNTR nach Preis ab 0.33 EUR bis 1.51 EUR
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RQ6E035TNTR | Hersteller : ROHM Semiconductor |
MOSFETs SOT457 N-CH 30V 3.5A |
auf Bestellung 4725 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ6E035TNTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6 Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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