RQ6E040XNTCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: MOSFET N-CH 30V 4A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
23+ | 0.77 EUR |
100+ | 0.53 EUR |
500+ | 0.42 EUR |
1000+ | 0.34 EUR |
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Technische Details RQ6E040XNTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V.
Weitere Produktangebote RQ6E040XNTCR nach Preis ab 0.47 EUR bis 1.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RQ6E040XNTCR | Hersteller : ROHM Semiconductor | MOSFET RQ6E040XN is the low on-resistance MOSFET, built-in G-S protection diode for switching application. |
auf Bestellung 873 Stücke: Lieferzeit 14-28 Tag (e) |
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RQ6E040XNTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
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