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RQ6E050ATTCR

RQ6E050ATTCR Rohm Semiconductor


datasheet?p=RQ6E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
Mindestbestellmenge: 3000
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Technische Details RQ6E050ATTCR Rohm Semiconductor

Description: MOSFET P-CH 30V 5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V.

Weitere Produktangebote RQ6E050ATTCR nach Preis ab 0.29 EUR bis 1.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RQ6E050ATTCR RQ6E050ATTCR Hersteller : Rohm Semiconductor datasheet?p=RQ6E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 6170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
30+0.6 EUR
100+0.46 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
RQ6E050ATTCR RQ6E050ATTCR Hersteller : ROHM Semiconductor datasheet?p=RQ6E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -5.0A(Id), (4.5V, 6.0V Drive)
auf Bestellung 15496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.26 EUR
10+0.8 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH