RQ7E100ATTCR ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -10.0A(Id), (4.5V, 6.0V Drive)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.86 EUR |
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Technische Details RQ7E100ATTCR ROHM Semiconductor
Description: MOSFET P-CH 30V 10A TSMT8, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ7E100ATTCR nach Preis ab 1.01 EUR bis 3.24 EUR
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RQ7E100ATTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
auf Bestellung 2378 Stücke: Lieferzeit 10-14 Tag (e) |
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