RR1LAM6STR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
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Technische Details RR1LAM6STR Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDTM, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDTM, Current - Average Rectified (Io): 1A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-128, Packaging: Tape & Reel (TR).
Weitere Produktangebote RR1LAM6STR nach Preis ab 0.26 EUR bis 0.74 EUR
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RR1LAM6STR | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1A PMDTM Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 1A |
auf Bestellung 9070 Stücke: Lieferzeit 10-14 Tag (e) |
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RR1LAM6STR | Hersteller : ROHM Semiconductor |
Rectifiers 750V Vr 1A Io Rectifying Diode |
auf Bestellung 39112 Stücke: Lieferzeit 10-14 Tag (e) |
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