RRH040P03TB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.72 EUR |
| 12+ | 1.54 EUR |
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Technische Details RRH040P03TB1 Rohm Semiconductor
Description: MOSFET P-CH 30V 4A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V.
Weitere Produktangebote RRH040P03TB1 nach Preis ab 1 EUR bis 2.39 EUR
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RRH040P03TB1 | Hersteller : ROHM Semiconductor |
MOSFET Pch -30V -4A MOSFET |
auf Bestellung 1553 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RRH040P03TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
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