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RRH090P03GZETB

RRH090P03GZETB Rohm Semiconductor

rrh090p03tb1-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Technische Details RRH090P03GZETB Rohm Semiconductor

Description: MOSFET P-CH 30V 9A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 650mW (Ta), Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote RRH090P03GZETB

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RRH090P03GZETB RRH090P03GZETB Rohm Semiconductor rrh090p03tb1-e.pdf Description: MOSFET P-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RRH090P03GZETB RRH090P03GZETB ROHM Semiconductor rrh090p03tb1-e.pdf MOSFETs Middle Power MOSFET Series (Single Type), halogen free and external plating Sn100%
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RRH090P03GZETB rrh090p03tb1-e.pdf
RRH090P03GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RRH090P03GZETB rrh090p03tb1-e.pdf
RRH090P03GZETB
Hersteller: ROHM Semiconductor
MOSFETs Middle Power MOSFET Series (Single Type), halogen free and external plating Sn100%
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH