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RRH090P03GZETB

RRH090P03GZETB ROHM Semiconductor

ROHM_S_A0001071246_1-2561369.pdf Hersteller: ROHM Semiconductor
MOSFET -30V P-CHANNEL -9A
auf Bestellung 2500 Stücke:
Lieferzeit 157-161 Tag (e)
Anzahl Preis ohne MwSt
2+2.53 EUR
10+ 2.27 EUR
100+ 1.78 EUR
500+ 1.46 EUR
1000+ 1.15 EUR
2500+ 1.08 EUR
5000+ 1.06 EUR
Mindestbestellmenge: 2
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Technische Details RRH090P03GZETB ROHM Semiconductor

Description: MOSFET P-CH 30V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V.

Weitere Produktangebote RRH090P03GZETB nach Preis ab 1.19 EUR bis 2.71 EUR

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RRH090P03GZETB RRH090P03GZETB Hersteller : Rohm Semiconductor rrh090p03tb1-e.pdf Description: MOSFET P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
auf Bestellung 1767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.71 EUR
10+ 2.22 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 7
RRH090P03GZETB RRH090P03GZETB Hersteller : Rohm Semiconductor rrh090p03tb1-e.pdf Description: MOSFET P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
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