RRQ045P03TR ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.67 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.81 EUR |
| 3000+ | 0.71 EUR |
| 6000+ | 0.67 EUR |
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Technische Details RRQ045P03TR ROHM Semiconductor
Description: MOSFET P-CH 30V 4.5A TSMT6, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote RRQ045P03TR nach Preis ab 1.73 EUR bis 2.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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RRQ045P03TR | Rohm Semiconductor |
 Description: MOSFET P-CH 30V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| RRQ045P03TR |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RRQ045P03TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 13+ | 1.73 EUR |
| RRQ045P03TR |
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auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)