RS07J-M-08 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.34 EUR |
| 2500+ | 0.3 EUR |
| 5000+ | 0.26 EUR |
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Technische Details RS07J-M-08 Vishay Semiconductors
Description: DIODE GP 600V 500MA DO219AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 500mA, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS07J-M-08
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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RS07J-M-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 600V 500MA DO219ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 9pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
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