
RS07J-M-08 Vishay Semiconductors
auf Bestellung 28420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 0.84 EUR |
10+ | 0.68 EUR |
100+ | 0.46 EUR |
1000+ | 0.26 EUR |
2500+ | 0.24 EUR |
10000+ | 0.21 EUR |
30000+ | 0.18 EUR |
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Technische Details RS07J-M-08 Vishay Semiconductors
Description: DIODE GP 600V 500MA DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote RS07J-M-08
Foto | Bezeichnung | Hersteller | Beschreibung |
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RS07J-M-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
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