RS07J-M-08 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.39 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.36 EUR |
| 5000+ | 0.31 EUR |
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Technische Details RS07J-M-08 Vishay Semiconductors
Description: DIODE GP 600V 500MA DO219AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 500mA, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS07J-M-08
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
RS07J-M-08 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 600V 500MA DO219ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 9pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RS07J-M-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 600V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH