RS1FJ-M3/I

RS1FJ-M3/I Vishay General Semiconductor - Diodes Division


rs1fdrs1fgrs1fjrs1fkrs1fm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details RS1FJ-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 1A DO219AB, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).

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RS1FJ-M3/I Vishay rs1fdrs1fgrs1fjrs1fkrs1fm.pdf Rectifiers 1A 600V 500NS SMF FAST SWITCHI
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RS1FJ-M3/I rs1fdrs1fgrs1fjrs1fkrs1fm.pdf
Hersteller: Vishay
Rectifiers 1A 600V 500NS SMF FAST SWITCHI
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Im Einkaufswagen  Stück im Wert von  UAH