RS1FLG-M3/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.083 EUR |
| 6000+ | 0.08 EUR |
| 9000+ | 0.076 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RS1FLG-M3/H Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS1FLG-M3/H nach Preis ab 0.14 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RS1FLG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB |
auf Bestellung 14670 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RS1FLG-M3/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
auf Bestellung 14670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |