RS1J M2G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 365+ | 0.2 EUR |
| 729+ | 0.098 EUR |
| 1163+ | 0.061 EUR |
| 1548+ | 0.046 EUR |
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Technische Details RS1J M2G TAIWAN SEMICONDUCTOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A, Mounting: SMD, Capacitance: 10pF, Max. forward impulse current: 30A, Case: SMA, Features of semiconductor devices: glass passivated, Type of diode: rectifying, Semiconductor structure: single diode, Reverse recovery time: 250ns, Load current: 1A, Max. forward voltage: 1.3V, Max. off-state voltage: 0.6kV, Kind of package: reel; tape.
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