RS1ML RTG Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 800MA SUB SMA, Voltage - DC Reverse (Vr) (Max): 1000 V, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Sub SMA, Current - Average Rectified (Io): 800mA, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).