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RS1PDHM3_A/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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Technische Details RS1PDHM3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-220AA (SMP), Mounting Type: Surface Mount, Package / Case: DO-220AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS1PDHM3_A/I nach Preis ab 0.18 EUR bis 0.71 EUR
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RS1PDHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AA Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 9pF @ 4V, 1MHz Technology: Standard |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1PDHM3_A/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Description: DIODE GEN PURP 200V 1A DO220AA
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 39+ | 0.54 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.19 EUR |
| 5000+ | 0.18 EUR |