RS2GHE3_A/I Vishay General Semiconductor
auf Bestellung 3036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.28 EUR |
| 3200+ | 0.24 EUR |
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Technische Details RS2GHE3_A/I Vishay General Semiconductor
Description: DIODE GEN PURP 400V 1.5A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RS2GHE3_A/I nach Preis ab 3.17 EUR bis 3.52 EUR
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| RS2GHE3_A/I | Hersteller : Vishay |
 Выпрямительный диод 1.5A, 400V, 150nS SMB, DO-214AA |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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RS2GHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
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