RS3E180ATTB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Produktrezensionen
Produktbewertung abgeben
Technische Details RS3E180ATTB1 Rohm Semiconductor
Description: ROHM - RS3E180ATTB1 - Leistungs-MOSFET, p-Kanal, 30 V, 18 A, 0.0041 ohm, SOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30, Dauer-Drainstrom Id: 18, hazardous: false, Qualifikation: -, MSL: -, usEccn: EAR99, Verlustleistung Pd: 2, Gate-Source-Schwellenspannung, max.: 2.5, euEccn: NLR, Verlustleistung: 2, Bauform - Transistor: SOP, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8, Produktpalette: -, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.0041, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0041, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote RS3E180ATTB1 nach Preis ab 2.07 EUR bis 6.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RS3E180ATTB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 18A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
auf Bestellung 2716 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
RS3E180ATTB1 | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -18.0A(Id), (4.5V, 6.0V Drive) |
auf Bestellung 1295 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RS3E180ATTB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 2716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.87 EUR |
| 10+ | 4.14 EUR |
| 100+ | 2.89 EUR |
| 500+ | 2.5 EUR |
| RS3E180ATTB1 |
|
Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -18.0A(Id), (4.5V, 6.0V Drive)
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -18.0A(Id), (4.5V, 6.0V Drive)
auf Bestellung 1295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.22 EUR |
| 10+ | 3.71 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.45 EUR |
| 1000+ | 2.34 EUR |
| 2500+ | 2.07 EUR |